UG30DPT-E3/45【PDF 1/4 页】DIODE 30A 200V 20NS DUAL TO3P-3

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UG30APT thru UG30DPT

Vishay General Semiconductor

Document Number: 88762

Revision: 05-Jun-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

Dual Common-Cathode Ultrafast Plastic Rectifier

FEATURES

? Glass passivated chip junction

Ultrafast recovery time

Low switching losses, high efficiency

Low forward voltage drop

High forward surge capability

Solder dip 260 °C, 40 s

Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching mode

power supplies, inverters, freewheeling diodes,

dc-to-dc converters, and other power switching

application.

MECHANICAL DATA

Case:

TO-247AD (TO-3P)

Epoxy meets UL 94V-0

flammability rating

Terminals:

Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

Polarity:

As marked

Mounting Torque:

10 in-lbs maximum

PRIMARY CHARACTERISTICS

IF(AV)

30 A

VRRM

50 V to 200 V

IFSM

300 A

trr

25 ns

0.85 V

TJ max. 150 °C

PIN 1

PIN 3

CASE

PIN 2

TO-247AD (TO-3P)

MAXIMUM RATINGS (TA

= 25 °C unless otherwise noted)

PARAMETER SYMBOL UG30APT UG30BPT UG30CPT UG30DPT UNIT

Maximum repetitive peak reverse voltage VRRM

50 100 150 200 V

Maximum RMS voltage VRMS

35 70 105 140 V

Maximum DC blocking voltage VDC

50 100 150 200 V

Maximum average forward rectified current at TC

= 120 °C I

F(AV)

30 A

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

IFSM

300 A

Operating and storage temperature range TJ, TSTG

- 65 to + 150 °C

ELECTRICAL CHARACTERISTICS

= 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL UG30APT UG30BPT UG30CPT UG30DPT UNIT

Maximum instantaneous

forward voltage per diode

15 A

30 A

10 A TJ

= 100 °C

1.0

1.15

0.85

Maximum DC reverse

current at rated DC

blocking voltage per diode

= 25 °C

TA = 100 °C

800

μA

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